The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[10p-Z05-1~19] 6.4 Thin films and New materials

Thu. Sep 10, 2020 12:30 PM - 5:30 PM Z05

Katsuhisa Tanaka(Kyoto Univ.), Yoshinobu Nakamura(Univ. of Tokyo), Yuji Muraoka(Okayama Univ.)

1:30 PM - 1:45 PM

[10p-Z05-5] Synthesis and structural analysis of high nitrogen containing a-CNx:H thin films using radio frequency plasma CVD of the acetylene-N2-Ar gas mixture

〇(M1)Ryota Watanuki1, Haruhiko Ito1 (1.Nagaoka Univ. of Tech.)

Keywords:Plasma CVD, Amorphous carbon nitride

In high frequency plasma CVD, carbon nitride film was prepared from acetylene and nitrogen as raw materials. Until now, our laboratory has prepared carbon nitride thin films from liquid organic compounds. In this study, gas raw material was used. This time, the amounts of acetylene and nitrogen to be introduced were changed, and the nitrogen content, the change in bonding state, the surface shape of the film, etc. were investigated. XPS, FT-IR, GD-OES, and stylus type film thickness meter were used for the analysis.