[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-10] Development of non-destructive interface state density measurement technique by pulsed

〇Takuma Yamashita¹, Obana Hiroki¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka masao² (1.Graduate school of science and technology Kumamoto Univ, 2.Kumamoto Univ)

Keywords:Pulse Photoconductivity Method, Interface states

In recent years, miniaturization of semiconductor devices has progressed, and it has become important to evaluate the interface states that affect the characteristics thereof. With the current interface state density evaluation technique, it is difficult to analyze the cause during the manufacturing process, and thus it is desired to establish an in-line measurement method. This study is a technique for nondestructive interfacial rank evaluation using the pulsed photoconductivity method. The presentation will explain the measurement principle in detail.