Oral presentation

[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 10, 2020 12:30 PM - 6:00 PM Z09

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 12:45 PM

[10p-Z09-1] Water Flow for Quick Batch-Type Silicon Wafer Wet Cleaninig

〇Toshinori Takahashi¹, Habuka Hitoshi¹, Goto Akihiro² (1.Yokohama Nat. UniV, 2.Pre--Tech)

12:45 PM - 1:00 PM

[10p-Z09-2] Alkaline cleaning behavior of a fluoridated carbon brush

〇Yuhei Nemoto¹, Takahiro Kanai¹, Takahiro Hamada¹, Yuji Nagashima¹, Kiyotugu Nagahara¹ (1.Shibamecha Corp.)

1:00 PM - 1:15 PM

[10p-Z09-3] Corrosion behavior of molybdenum in acid solutions

〇Saki Akimoto¹, Masaaki Hirakawa² (1.Shibaura mechatronics, 2.Toshiba Corporate Manufacturing Engineering Center)

1:15 PM - 1:30 PM

[10p-Z09-4] Elucidation of saw marks flattening mechanism in Si etching using HF/HNO₃ (2)

〇Takashi Fukatani¹, Kenji Takeo¹, Yasuhiro Shikahama¹, Kenya Nishio¹, Tomoki Hirano¹, Suguru Saito¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions)

1:30 PM - 1:45 PM

[10p-Z09-5] Nano-Groove Formation on Si (111) Surfaces Assisted by Ag Particles Selectively Deposited at Step Edges

〇(M1)Zhida Ma¹, Seiya Masumoto¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[10p-Z09-6] Quantitative evaluation of N concentration of WN films using atom probe tomography

〇Akira Sakamoto¹, Akira Kuramoto¹, Teruyuki Kinno¹ (1.Kioxia)

2:15 PM - 2:30 PM

[10p-Z09-7] Formation and Characterization of Graphene on SiC Modified by Plasma Oxidation and Wet Etching

〇Makoto Ochi¹, Ouki Minami¹, Yasuhisa Sano¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[10p-Z09-8] Development of System to Measure Electrical Characteristics of MOS Structures Equipped with a Reaction Chamber with Water Vapor

〇Kenta Arima¹, Yohei Wada¹, Ryo Mikurino¹, Makoto Ochi¹, Kentaro Kawai¹, Kazuya Yamamura¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

[10p-Z09-9] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

〇Hiroki Obana¹, Takuma Yamashita¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

3:00 PM - 3:15 PM

[10p-Z09-10] Development of non-destructive interface state density measurement technique by pulsed

〇Takuma Yamashita¹, Obana Hiroki¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka masao² (1.Graduate school of science and technology Kumamoto Univ, 2.Kumamoto Univ)

3:15 PM - 3:30 PM

[10p-Z09-11] Ultrafast relaxation processes of photoinjected valence holes in silicon

〇Yusuke Sato¹, Jun'nichi Kanasaki¹, Isamu Yamamoto², Junpei Azuma² (1.Osaka city Univ., 2.Saga Univ.)

3:30 PM - 3:45 PM

[10p-Z09-12] An examination of the calculation method of the number of secondary electron emission and the validity evaluation with the measurement of sample current

〇Ryo Nozaki^1,2, Kota Ushimaru^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

4:00 PM - 4:15 PM

[10p-Z09-13] TCAD simulation of BTI characteristics influenced by Oxygen Vacancies in Al₂O₃/GeO₂/Ge pMOSFET

〇Shun Kawashima¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Science)

4:15 PM - 4:30 PM

[10p-Z09-14] Multi-Flux Device Simulation Applied to MOSFET Inversion Layer

〇Koichi Fukuda¹, Hidehiro Asai¹, Junichi Hattori¹, Tsutomu Ikegami¹ (1.AIST)

4:30 PM - 4:45 PM

▲ [10p-Z09-15] A Simulation Study on the System Performance of Neural Networks using Embedded Nonvolatile Memory

〇(M2)Paul Davin Johansen^1,2, Masaharu Kobayashi^1,2 (1.Inst. of Industrial Science, 2.University of Tokyo)

4:45 PM - 5:00 PM

△ [10p-Z09-16] Speeding Up Quantum Transport Simulation with Adaptive Moment Estimation

〇(B)Jo Okada¹, Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

5:00 PM - 5:15 PM

△ [10p-Z09-17] NEGF analysis of band-to-band tunneling in TMDC nanoribbon

〇Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

△ [10p-Z09-18] Size and Orientation Effects on Electronic States in Rectangular Cross-sectional Sn Nanowires

〇Mizuki Sato¹, Hajime Tanaka¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

△ [10p-Z09-19] Calculation of phonon-limited mobility in Si nanowire from atomistic structure of SiO₂/Si interface

〇Takahisa Tanaka¹, Takeaki Yajima¹, Ken Uchida¹ (1.The Univ. of Tokyo)

5:45 PM - 6:00 PM

[10p-Z09-20] Implementation of phonon mode conversion in TCAD simulation of phonon thermal transport

〇Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹ (1.AIST)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-1] Water Flow for Quick Batch-Type Silicon Wafer Wet Cleaninig

[10p-Z09-2] Alkaline cleaning behavior of a fluoridated carbon brush

[10p-Z09-3] Corrosion behavior of molybdenum in acid solutions

[10p-Z09-4] Elucidation of saw marks flattening mechanism in Si etching using HF/HNO₃ (2)

[10p-Z09-5] Nano-Groove Formation on Si (111) Surfaces Assisted by Ag Particles Selectively Deposited at Step Edges

[10p-Z09-6] Quantitative evaluation of N concentration of WN films using atom probe tomography

[10p-Z09-7] Formation and Characterization of Graphene on SiC Modified by Plasma Oxidation and Wet Etching

[10p-Z09-8] Development of System to Measure Electrical Characteristics of MOS Structures Equipped with a Reaction Chamber with Water Vapor

[10p-Z09-9] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

[10p-Z09-10] Development of non-destructive interface state density measurement technique by pulsed

[10p-Z09-11] Ultrafast relaxation processes of photoinjected valence holes in silicon

[10p-Z09-12] An examination of the calculation method of the number of secondary electron emission and the validity evaluation with the measurement of sample current

[10p-Z09-13] TCAD simulation of BTI characteristics influenced by Oxygen Vacancies in Al₂O₃/GeO₂/Ge pMOSFET

[10p-Z09-14] Multi-Flux Device Simulation Applied to MOSFET Inversion Layer

▲ [10p-Z09-15] A Simulation Study on the System Performance of Neural Networks using Embedded Nonvolatile Memory

△ [10p-Z09-16] Speeding Up Quantum Transport Simulation with Adaptive Moment Estimation

△ [10p-Z09-17] NEGF analysis of band-to-band tunneling in TMDC nanoribbon

△ [10p-Z09-18] Size and Orientation Effects on Electronic States in Rectangular Cross-sectional Sn Nanowires

△ [10p-Z09-19] Calculation of phonon-limited mobility in Si nanowire from atomistic structure of SiO₂/Si interface

[10p-Z09-20] Implementation of phonon mode conversion in TCAD simulation of phonon thermal transport

Authenticate

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

▲ [10p-Z09-15] A Simulation Study on the System Performance of Neural Networks using Embedded Nonvolatile Memory

△ [10p-Z09-16] Speeding Up Quantum Transport Simulation with Adaptive Moment Estimation

△ [10p-Z09-17] NEGF analysis of band-to-band tunneling in TMDC nanoribbon

△ [10p-Z09-18] Size and Orientation Effects on Electronic States in Rectangular Cross-sectional Sn Nanowires

△ [10p-Z09-19] Calculation of phonon-limited mobility in Si nanowire from atomistic structure of SiO2/Si interface

Authenticate

△ [10p-Z09-19] Calculation of phonon-limited mobility in Si nanowire from atomistic structure of SiO₂/Si interface