The 81st JSAP Autumn Meeting, 2020

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 10, 2020 12:30 PM - 6:00 PM Z09

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

4:15 PM - 4:30 PM

[10p-Z09-14] Multi-Flux Device Simulation Applied to MOSFET Inversion Layer

〇Koichi Fukuda1, Hidehiro Asai1, Junichi Hattori1, Tsutomu Ikegami1 (1.AIST)

Keywords:Semiconductor device simulation, Multi-Flux method, MOSFET channel subbands

Multi-Flux device simulation method is applied to MOSFET channel subband nonuniform from source to drain