[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-Z10-16] Development of MEMS Rogowski Coil Current Sensor and its Dependence of Sensing Properties on Current Path

〇Yoshiyuki Watanabe¹, Mutsuto Kato¹, Toru Yahagi¹, Hiroki Murayama¹, Kenichi Yoshida², Kazuyuki Sashida², Katsuya Ikeda², Ryosuke Ikeda², Toshiyuki Takemori² (1.Yamagata Res Inst Tech, 2.Shindengen)

Keywords:MEMS, Rogowski coil, Current sensor

We have fabricated a MEMS Rogowski coil current sensor with TSV structures (Thickness of silicon wafer: 300 μm, specific resistance >10,000 Ωcm). TSVs were fabricated by Silicon Deep RIE and Ni-P plating in a Φ100 μm through hole to form a current terminal for energization and a swirling coil for current detection. The device is 10 mm ×10 mm×0.3 mm thick, and has 4×4 TSVs in the 1.2 mm area, 16 × 16 TSVs in the 6 mm area, and a square shape in the central conducting part 112 TSVs. We have investigated the current detection characteristics due to the difference in current paths.