[10p-Z10-1~17] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [10p-Z10-7] Investigation on Rapid Solid Phase Crystallization of Amorphous Silicon Films Induced by Micro-Thermal-Plasma Jet

〇(D)Nguyen ThiKhanh Hoa¹、Yuri Mizukawa¹、Hiroaki Hanafusa¹、Shohei Hayashi²、Seiichiro Higashi¹ (1.Hiroshima Univ.、2.Toray Research Cent.)

キーワード：micro-thermal-plasma jet, solid phase crystallization, silicon films

This research investigates the properties of SPC films fabricated by annealing a-Si films using a micro-thermal-plasma jet (µ-TPJ) under scanning speed from 500-800 mm/s. Crystalline volume fraction was extracted from transient reflectivity by the time-resolved reflectivity method. High-resolution transmission electron microscopy (HRTEM) was used to observe the grain size. A theoretical model was introduced to explain the kinetics of SPC in the microsecond regime. HRTEM image shows the distribution of grain size, and most of the grains are smaller than 20 nm. The decrease of grain size is related to increasing of scanning speed. From the theoretical calculation, when v is 500 mm/s, the grain size varies from 3 nm to 36 nm, average grain size (r) is 20 nm. In case v is 800 mm/s, the grain size varies from 1 nm to 20 nm, r is 16 nm. The r decreases with the increase of R_h. This estimated r are fairly agreed with HRTEM observation results. The crystalline volume fraction from the calculation is the best fit with it from the experiment.