[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

△ [10p-Z23-10] Influence of surface morphology on Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:dislocation, 4H-SiC, Reaction pathway analysis

BPDs in 4H-SiC are converted into TEDs to reduce BPDs (BPD-TED conversion) by using the step-controlled epitaxy on a small-offcut angle (0001) substrate. The morphology of the SiC is one of the factors that influence the conversion rate. In this work, we performed the reaction pathway analysis to investigate the effect of offcut angle. As a result of this analysis, it was found that in some condition, the contraction of BDPs in the point far from the step can easily occur. In other words, it was found that contraction can easily occur in a small-offcut angle.