Oral presentation

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 10, 2020 1:15 PM - 6:00 PM Z23

Sakiko Kawanishi(Tohoku Univ.), Munetaka Noguchi(Mitsubishi Electric), Takeshi Tawara(富士電機)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

▲ [10p-Z23-1] Solution growth of 150 mm SiC under the guidance of machine learning

〇Wancheng YU¹, Can ZHU¹, Yosuke TSUNOOKA², Wei HUANG², Yifan DANG², Shunta HARADA^1,2, Miho TAGAWA^1,2, Toru UJIHARA^1,2,3 (1.IMaSS, Nagoya Univ., 2.Nagoya Univ., 3.GaN-OIL, AIST)

1:30 PM - 1:45 PM

▼ [10p-Z23-2] Numerical investigation and optimization of time evolution in the solution during solution growth for SiC crystal

〇(D)Yifan Dang¹, Can Zhu², Wancheng Yu², Wei Huang¹, Motoki Ikumi¹, Shunta Harada^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2,3 (1.Graduate School of Engineering, Nagoya University, 2.IMaSS, Nagoya University, 3.GaN-OIL, AIST)

1:45 PM - 2:00 PM

[10p-Z23-3] Deposition of SiC thin films using cyclic silane

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco Inc.)

2:00 PM - 2:15 PM

△ [10p-Z23-4] Fabrication of electric conductive SiC thin films for electrode application

〇Takashi Koide¹, Young Jin², Shigeo Yasuhara², Wakana Takeuchi¹ (1.Aich Inst. of Tech., 2.Japan Advanced Chemicals Ltd.)

2:15 PM - 2:30 PM

[10p-Z23-5] Rapid Cleaning of SiC CVD Reactor Using ClF₃ Gas

〇Masaya Hayashi¹, Takumi Mamyouda¹, Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ, 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

2:30 PM - 2:45 PM

[10p-Z23-6] Rate and profile optimization of 4H-SiC wafer etching using ClF₃ gas

Kenta Irikura¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

2:45 PM - 3:00 PM

[10p-Z23-7] Large diameter SiC wafer dry etching using ClF₃ gas

Ryohei Kawasaki¹, Linsheng Xie¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

3:15 PM - 3:45 PM

[10p-Z23-8] [The 10th Promotion and Nurturing of Female Researchers Contribution Award] Research of SiC crystal defect for highly reliable SiC power device

〇Kumiko Konishi¹ (1.Hitachi, Ltd.)

3:45 PM - 4:00 PM

[10p-Z23-9] [The 42nd JSAP Young Scientist Award Speech] Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

〇Shohei Hayashi¹, Tamotsu Yamashita², Junji Senzaki³, Masaki Miyazato⁴, Mina Ryo⁴, Masaaki Miyajima⁴, Tomohisa Kato³, Yoshiyuki Yonezawa³, Kazutoshi Kojima³, Hajime Okumura³ (1.Toray Research Center, 2.Showa Denko, 3.AIST, 4.Fuji Electric)

4:00 PM - 4:15 PM

△ [10p-Z23-10] Influence of surface morphology on Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

4:15 PM - 4:30 PM

[10p-Z23-11] 1SSF Expansion from Immobile Basal Plane Dislocations in 4H-SiC

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

4:30 PM - 4:45 PM

△ [10p-Z23-12] Shrinkage of single Shockley stacking faults in 4H-SiC epitaxial layers in thermal equilibrium

〇(M1)Euihyeon Do¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:00 PM - 5:15 PM

△ [10p-Z23-13] Formation of high-quality 4H-SiC/SiO₂ interface by excluding oxidation process

〇(D)Keita Tachiki¹, Mitsuaki Kaneko¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[10p-Z23-14] First-principles study of anisotropy of nitrogen incorporation into bulk 4H-SiC

〇Naoki Komatsu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Grad. Schl. Eng., Kobe Univ.)

5:30 PM - 5:45 PM

[10p-Z23-15] First-principles calculations for the reaction processes at 4H-SiC/SiO₂ interface: The effect of wet oxidations

〇Tsunashi Shimizu¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

5:45 PM - 6:00 PM

[10p-Z23-16] Thermal Oxidation Rates of SiC Surfaces at Temperatures below 1000℃

〇Yuta Murono¹, Haruto Koriyama¹, Yosiharu Enta¹ (1.HIROSAKI Univ.)

Oral presentation

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 11, 2020 9:00 AM - 11:30 AM Z23

Norihiro Hoshino(CRIEPI)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

〇Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

〇Hajime Tanaka^1,2, Tsunenobu Kimoto¹, Nobuya Mori² (1.Kyoto Univ., 2.Osaka Univ.)

9:30 AM - 9:45 AM

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

〇Ryoya Ishikawa¹, Masahiro Hara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

〇Qimin Jin¹, Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:15 AM - 10:30 AM

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

〇(M1)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

10:30 AM - 10:45 AM

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

10:45 AM - 11:00 AM

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

〇Hibiki Nakashima¹, Yoshiaki Daigo², Ichiro Mizushima^2,3, Takashi Yoda^2,3, Kenta Chokawa¹, Kenji Shiraishi¹ (1.Nagoya Univ., 2.NuFlare Technology, Inc., 3.FIRST, Tokyo Institute of Technology)

11:00 AM - 11:15 AM

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

〇Hiroaki Hanafusa¹, Daichi Todo², Seiichiro Higashi¹ (1.Hiroshima Univ., 2.Hiroshima Univ. AdSM)

11:15 AM - 11:30 AM

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Tatsuki Koyanagi², Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.AdSE,Hiroshima Univ., 2.AdSM,Hiroshima Univ.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

▲ [10p-Z23-1] Solution growth of 150 mm SiC under the guidance of machine learning

▼ [10p-Z23-2] Numerical investigation and optimization of time evolution in the solution during solution growth for SiC crystal

[10p-Z23-3] Deposition of SiC thin films using cyclic silane

△ [10p-Z23-4] Fabrication of electric conductive SiC thin films for electrode application

[10p-Z23-5] Rapid Cleaning of SiC CVD Reactor Using ClF₃ Gas

[10p-Z23-6] Rate and profile optimization of 4H-SiC wafer etching using ClF₃ gas

[10p-Z23-7] Large diameter SiC wafer dry etching using ClF₃ gas

[10p-Z23-8] [The 10th Promotion and Nurturing of Female Researchers Contribution Award] Research of SiC crystal defect for highly reliable SiC power device

[10p-Z23-9] [The 42nd JSAP Young Scientist Award Speech] Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

△ [10p-Z23-10] Influence of surface morphology on Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

[10p-Z23-11] 1SSF Expansion from Immobile Basal Plane Dislocations in 4H-SiC

△ [10p-Z23-12] Shrinkage of single Shockley stacking faults in 4H-SiC epitaxial layers in thermal equilibrium

△ [10p-Z23-13] Formation of high-quality 4H-SiC/SiO₂ interface by excluding oxidation process

[10p-Z23-14] First-principles study of anisotropy of nitrogen incorporation into bulk 4H-SiC

[10p-Z23-15] First-principles calculations for the reaction processes at 4H-SiC/SiO₂ interface: The effect of wet oxidations

[10p-Z23-16] Thermal Oxidation Rates of SiC Surfaces at Temperatures below 1000℃

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

Authenticate

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

▲ [10p-Z23-1] Solution growth of 150 mm SiC under the guidance of machine learning

▼ [10p-Z23-2] Numerical investigation and optimization of time evolution in the solution during solution growth for SiC crystal

△ [10p-Z23-4] Fabrication of electric conductive SiC thin films for electrode application

△ [10p-Z23-10] Influence of surface morphology on Contraction or Expansion of Basal Plane Partial Dislocations in 4H-SiC

△ [10p-Z23-12] Shrinkage of single Shockley stacking faults in 4H-SiC epitaxial layers in thermal equilibrium

△ [10p-Z23-13] Formation of high-quality 4H-SiC/SiO2 interface by excluding oxidation process

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

Authenticate

△ [10p-Z23-13] Formation of high-quality 4H-SiC/SiO₂ interface by excluding oxidation process