[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-11] 1SSF Expansion from Immobile Basal Plane Dislocations in 4H-SiC

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

Keywords:silicon carbide, basal plane dislocation, Shockley stacking fault

Some combinations of partial dislocations that constitute basal plane dislocations have not previously been considered as sources for single Shockley stacking faults expanded in 4H-SiC epilayers, because they are regarded as immobile. We show the possibility of immobile C-core partial dislocations being converted to mobile Si-core partial dislocations. A model is proposed from a dynamic viewpoint for interpreting the mechanism.