[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Tatsuki Koyanagi², Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.AdSE,Hiroshima Univ., 2.AdSM,Hiroshima Univ.)

Keywords:semiconductor, SiC, Optical-Interference Contactless Thermometer

If it is possible to directly observe the temperature of the SiC power device, more accurate device simulation and detection of defects caused by heat will be possible. In this study, I attempted to visualize the thermal diffusion process inside a SiC wafer by applying the Optical-Interference Contactless Thermometer we have developed.