[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-3] Deposition of SiC thin films using cyclic silane

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco Inc.)

Keywords:SiC, deposition, cyclic silane

Generally, SiC thin films are deposited using silane or chloride. These are harmful to the environment and the human because of their pyrophoricity or corrosivity. Therefore, more safe precursor is demanded. In this study, we tried to deposit SiC thin films using the cyclic silane which is non-corrosive and non-pyrophoric. XRD pattern showed reflection peak at 35.6° which is indexed to 111 of β-SiC. FTIR results confirmed the presence of Si-C bond and the absence of Si-H bond.