Hitoshi Habuka

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 8:30 AM - 11:30 AM Z10

Oral presentation
| 13 Semiconductors
| 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-Z10-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:15 AM - 11:30 AM

[9a-Z10-11] Heavy boron doping using boron trichloride gas for silicon epitaxial growth

Mitsuko Muroi¹, Mana Otani¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Thu. Sep 10, 2020 1:15 PM - 6:00 PM Z23

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM

[10p-Z23-6] Rate and profile optimization of 4H-SiC wafer etching using ClF₃ gas

Kenta Irikura¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

2:45 PM - 3:00 PM

[10p-Z23-7] Large diameter SiC wafer dry etching using ClF₃ gas

Ryohei Kawasaki¹, Linsheng Xie¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

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