[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-7] Large diameter SiC wafer dry etching using ClF₃ gas

Ryohei Kawasaki¹, Linsheng Xie¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Keywords:SiC, ClF3, Large wafer etching

For the future large-diemeter silicon carbide wafer production process, the possibility of high rate etching was evakluated, in detail, using the umerical calculations.