[11a-Z02-1~11] 15.4 III-V-group nitride crystals

[11a-Z02-8] Growth of GaN Film on ScAlMgO₄ Substrate by RF-MBE Ⅱ

〇(M1)Seiya Kayamoto¹, Takashi Fujii^1,2, Tsuguo Fukuda², Ryuichi Sugie³, Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal lab., 3.Toray Research Center, Inc.)

Keywords:ScAlMgO4, GaN, RF-MBE

ScAlMgO₄ (SAM) has a lattice matching as small as 1.8% in a-axis with GaN, and thermal expansion mismatch to GaN is also small. Moreover, we obtain SAM crystal with no dislocation. Therefore, SAM would be suitable for substrates for nitride semiconductor growth. We conducted GaN thin films growth on SAM using RF-MBE that is possible low temperature growth under high vacuum. The growth parameters which are growth temperatures and Ga Flux were changed, and we reviewed growth conditions. At the growth temperature was 650℃, we obtained hexagonal GaN thin film on SAM with no droplets on the surface. Also, diffusion of constituent elements from SAM into the GaN film was not measured by SIMS.