The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-Z09-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Sep 11, 2020 8:30 AM - 11:45 AM Z09

Kensuke Ota(Kioxia), Osamu Nakatsuka(Nagoya Univ.)

8:45 AM - 9:00 AM

[11a-Z09-2] Improvement of electrical characteristics of junctionless transistor with BF2+ implanted poly-Si channel by boron segregation and fluorine passivation

〇(D)Minju Ahn1, Takuya Saraya1, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.Institute of Industrial Science, The University of Tokyo)

Keywords:Juntionless transistor, Polycrystalline silicon, Fluorine

In this work, we experimentally investigated the dependence of dopant types (P+, B+, BF2+) on the poly-Si JL transistors. We found that BF2+ implanted poly-Si JL transistors have superior electrical characteristics such as steep SS and high carrier mobility to others, and it is expected that the passivation effect of F is remarkably effective even in the JL poly-Si transistors.