Keywords:Ga doped ZnO TFT, Ga diffusion, ZnO TFT, Current transportation ability, ZnO NPs layer, Sheet resistance
The dramatic improvements of the current transportation ability of ZnO-NP based TFTs by using a unique thermal diffusion type Ga-doping into ZnO-NPs are presented. Ga diffused with ZnO NPs in air ambient at 800 °C and a dramatic reduction of sheet resistance observed. Ga incorporated into ZnO-NPs with substituting for Zn; i.e. Ga-doping was achieved effectively. a mechanism may that the existence of moisture in the ambient gas tended to cause Zn-related defects making a substitution with Ga easier. By using our unique Ga-doping technique, 1000 times more current transporting ability could be achieved.