The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-Z09-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Sep 11, 2020 8:30 AM - 11:45 AM Z09

Kensuke Ota(Kioxia), Osamu Nakatsuka(Nagoya Univ.)

9:45 AM - 10:00 AM

[11a-Z09-6] Improvement of current transportation ability of ZnO-nanoparticle-based thin-film transistors by diffusion type Ga-doping process

〇(D)MD MARUFUL ISLAM1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University)

Keywords:Ga doped ZnO TFT, Ga diffusion, ZnO TFT, Current transportation ability, ZnO NPs layer, Sheet resistance

The dramatic improvements of the current transportation ability of ZnO-NP based TFTs by using a unique thermal diffusion type Ga-doping into ZnO-NPs are presented. Ga diffused with ZnO NPs in air ambient at 800 °C and a dramatic reduction of sheet resistance observed. Ga incorporated into ZnO-NPs with substituting for Zn; i.e. Ga-doping was achieved effectively. a mechanism may that the existence of moisture in the ambient gas tended to cause Zn-related defects making a substitution with Ga easier. By using our unique Ga-doping technique, 1000 times more current transporting ability could be achieved.