[11a-Z09-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [11a-Z09-5] Demonstration of Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Process Compatible In-Al-Zn Oxide Channel

〇Hirokazu Fujiwara¹, Yuta Sato¹, Nobuyoshi Saito¹, Tomomasa Ueda¹, Keiji Ikeda¹ (1.Kioxia Corp.)

Keywords:oxide semiconductor, vertical field effect transistor

We have successfully developed a surrounding gate vertical-channel FET with gate length of 40nm using BEOL process compatible In-Al-Zn-O channel, for the first time. Fabricated FETs exhibited both high mobility (~12cm²/Vs) and excellent cut off characteristics (S.S. = 130mV/dec.) even after annealing at 420 ^oC. In addition, it also indicated high reliability and achieved endurance over 10¹¹ cycles. These results indicate that a great potential of surrounding gate short-channel vertical FET with an oxide-semiconductor channel as high performance BEOL transistor for 3D-LSI applications.