[11a-Z09-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-Z09-9] Design and analysis of a new ultralow-voltage-retention SRAM cell

〇Daiki Kitagata¹, Hayato Yoshida¹, Yusaku Shiotsu¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.Tokyo Inst. of Tech.)

Keywords:Standby power reduction, Power gating, SRAM