The 81st JSAP Autumn Meeting, 2020

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[11a-Z10-1~10] 13.3 Insulator technology

Fri. Sep 11, 2020 8:30 AM - 11:15 AM Z10

Yuuichiro Mitani(Tokyo City University)

9:15 AM - 9:30 AM

[11a-Z10-4] Penetration barrier of alkaline earth metal and copper group ions into SiO2 and Si3N4 films

〇Tomoki Oku1, Totsuka Masahiro1, Sasaki Hajime1 (1.Mitsubishi Electric)

Keywords:moisture resistance, molecular orbital calculation, ion effect

The penetration barrier of various ions including alkaline earth metal and copper group ions into the SiO2 and Si3N4 films was analyzed by molecular orbital calculation. As a result, it was found that alkali metal, alkaline earth metal and copper group ions have a smaller penetration barrier than H2O molecules. It is suggested that these ions affect moisture resistance.