The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-Z02-1~19] 15.4 III-V-group nitride crystals

Fri. Sep 11, 2020 1:00 PM - 6:15 PM Z02

Tsutomu Araki(Ritsumeikan Univ.), Shugo Nitta(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

3:30 PM - 3:45 PM

[11p-Z02-10] MOVPE Growth of AlN on Annealed Sputtered AlN Templates with Nano Pattern

Yukino Iba1, Kanako Shojiki1, Shigeyuki Kuboya2, Kenjiro Uesugi2, Shiyu Xiao3, Hideto Miyake3,1 (1.Grad. Sch. of Eng. Mie Univ., 2.SPORR Mie Univ., 3.Grad. Sch. of RIS Mie Univ.)

Keywords:MOVPE, AlN, nano-pattern

We have reported that the low-TDD-AlN film could be obtained by performing a face-to-face annealing for a sputter-deposited AlN films (FFA Sp-AlN). On the other hand, effects of AlN film crystallinity depends on MOVPE growth conditions on nanopatterns have not been clarified. In this study, we conducted metalorganic vapor phase epitaxy on nano-patterned FFA Sp-AlN with varied growth temperature. Thereafter, crystal quality was elucidated by transmission electron microscope (TEM), atomic force microscope (AFM) and X-ray diffraction rocking curve (XRC) measurements.