[11p-Z04-1~14] 13.7 化合物及びパワー電子デバイス・プロセス技術

[11p-Z04-12] 低温FIB-断面STEM法によるSi/Diamond表面活性化接合界面の構造評価

〇大野 裕¹、梁 剣波²、吉田 秀人³、清水 康雄¹、永井 康介¹、重川 直輝² (1.東北大金研、2.大阪市大、3.阪大産研)

キーワード：ダイヤモンド, 表面活性化接合, 低温FIB

In the SAB process, surfaces of diamond and Si wafers are activated at RT before bonding by creating dangling bonds via the irradiation of high-energy Ar atoms in a high vacuum, and the surfaces are then bonded by the contact most of the time under pressure to form strong chemical bonds even for imperfect surfaces. Atomic intermixing at the interfaces, presumably due to the transient enhanced diffusion assisted by the point defects introduced in the surface activation process, is confirmed during the bonding process. The crystallinity at the intermixing region is rather low, and it is recovered by 1000 ^oC annealing via the formation of SiC layers, that would play a pivotal role in the relaxation process of the residual stress due to the misfit of thermal expansion coefficient between diamond and Si. Therefore, the defect-assisted atomic diffusion at the interfaces would be a key concept for the formation of high thermal-stability diamond/Si heterointerfaces.