The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11p-Z09-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Sep 11, 2020 12:45 PM - 5:15 PM Z09

Gento Yamahata(NTT BRL), Munehiro Tada(NEC), Kazuhiko Endo(AIST)

2:15 PM - 2:30 PM

[11p-Z09-5] [The 11th Silicon Technology Division Award Speech] Bilayer tunnel field effect transistor with oxide-/group-IV semiconductors

Kimihiko Kato1,2, Hiroaki Matsui1, Hitoshi Tabata1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ. of Tokyo, 2.AIST)

Keywords:TFET, oxide semiconductor, group-IV semiconductor

Tunnel field effect transistor (TFET) is one of attractive electrical devices as a steep-slope transistor, which exceed the physical limit of conventional MOSFET. In order to realize high-performance TFET with high compatibility with Si CMOS platform, we are proposing the bilayer TFET structure by utilizing an n-type oxide semiconductor channel and a p-type group-IV semiconductor source. In this study, we will report our achievement about first experimental demonstration of the proposed bilayer TFET structure with the ZnO/Si and ZnO/Ge hetero junction.