[11p-Z10-1~8] 13.3 絶縁膜技術

▼ [11p-Z10-6] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate

〇(D)TsungEn Lee¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.The Univ. of Tokyo)

キーワード：high-k, SiGe, interface trap density

SiGe MOSFETs have stirred much attention as pchannel devices, because of the high hole mobility and the appropriate bandgap. However, the undesired formation of GeO_x in the interfacial layers (IL) can be regarded as an origin of the MOS interface degradation [1]. We have recently reported the improvement of SiGe MOS interface properties by employing TiN/ALD Y₂O₃ gate stacks with PMA at 450^oC [2], whereas the effects of different high-k films on the SiGe MOS interface properties have not been fully studied yet. In this study, the impacts of ALD high-k materials, Y₂O₃, Al₂O₃, HfO₂ and ZrO₂, on the SiGe MOS interface properties including D_it are systematically examined with changing PMA temperature.