[11p-Z10-1~8] 13.3 絶縁膜技術

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB₆ metal thin film and LaB_xN_y insulating layer

〇(DC)KyungEun Park¹、Hideki Kamata¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：N-doped LaB6, Floating-gate memory, High-k

The nitrogen-doped (N-doped) LaB₆ has low resistivity, low work function, and chemical stability. We have reported the thin film quality of N-doped LaB₆ electrode (metal : M) and formation of LaB_xN_y (insulator: I) thin film by Ar/N₂ plasma sputtering. In this study, the MIMIS structure diode was investigated to floating-gate memory.