14:30 〜 14:45
▲ [11p-Z29-5] Tunable Optical Properties of Copper Phthalocyanine Molecules Adsorbed on MoS2 Based Field Effect Transistor
キーワード：MoS2,FET,Phthalocyanine molecules,Photo current
In comparison with other transition metal dichalcogenides (TMDs) both single and multilayer molybdenum disulfide (MoS2) have achieved much popularity for its outstanding electronic and optoelectronic applications. MoS2 also plays significant role by stacking with organic materials like copper phthalocyanine (CuPc), to use in low power electronics and optoelectronics such as tunneling transistors, photodetectors.
MoS2 flakes were transferred to 300 nm SiO2 covered heavily doped silicon substrates using scotch tape method and FET device was fabricated by electron beam lithography. The measurement of electrical properties and CuPc adsorption were performed in a UHV chamber at an operating vacuum pressure (~10-6 Pa). Optical properties were observed by injecting light from a monochromatic light source.
The role of CuPc molecules adsorbed on MoS2 FET under light illumination has been focused on this work. Figure 1 indicates the wavelength(nm)-IDS intensity(A) of pristine and CuPc-MoS2 FET surface where a new peak is to be found at 720 nm wavelength after light irradiation on CuPc-MoS2 surface that is absent in pristine MoS2 FET surface.
The appearance of a new peak suggests that a charge transfer transition happens from the CuPc highest occupied molecular orbital (HOMO) to the MoS2 conduction band minimum (CBM) that has been demonstrated in Fig. 2.
MoS2 flakes were transferred to 300 nm SiO2 covered heavily doped silicon substrates using scotch tape method and FET device was fabricated by electron beam lithography. The measurement of electrical properties and CuPc adsorption were performed in a UHV chamber at an operating vacuum pressure (~10-6 Pa). Optical properties were observed by injecting light from a monochromatic light source.
The role of CuPc molecules adsorbed on MoS2 FET under light illumination has been focused on this work. Figure 1 indicates the wavelength(nm)-IDS intensity(A) of pristine and CuPc-MoS2 FET surface where a new peak is to be found at 720 nm wavelength after light irradiation on CuPc-MoS2 surface that is absent in pristine MoS2 FET surface.
The appearance of a new peak suggests that a charge transfer transition happens from the CuPc highest occupied molecular orbital (HOMO) to the MoS2 conduction band minimum (CBM) that has been demonstrated in Fig. 2.