[8a-Z05-1~11] 6.2 Carbon-based thin films

[8a-Z05-4] Etching rate of two-types of DLC films using atomic hydrogen

〇Akira Heya¹, Masahito Niibe², Tetsuo Harada², Hiroki Akasaka³, Kazuhiro Kanda², Takeo Watanabe², Koji Sumitomo¹ (1.Univ. of Hyogo, 2.LASTI Univ. of Hyogo, 3.Tokyo Tech)

Keywords:atomic hydrogen, surface contamination, amorphous carbon

To clarify the reaction between the surface contaminants of the optical mirror in the EUV lithography system and atomic hydrogen, and to search for a model material to optimize the conditions of the AHA method, the removal rates of two types of DLC films were evaluated. The etching rate of
P-CVD-a-C:H with higher hydrogen content was faster, which was closer to the
etching rate (0.1 nm/min) of the contaminants on the Ni mirror. On the other hand, in the FCVA-a-C film, almost no step was observed in the treatment up to 60 min.