The 81st JSAP Autumn Meeting, 2020

Presentation information

Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Concerted approach of characterization and theory-

[8p-Z02-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Concerted approach of characterization and theory-

Tue. Sep 8, 2020 1:30 PM - 5:30 PM Z02

Yoshihiro Ishitani(Chiba Univ.), Akira Sakai(Osaka Univ.)

5:00 PM - 5:30 PM

[8p-Z02-8] Study on Nitride Semiconductor Singularity Structures Using Machine-Learning Potentials: Structures, Phonon and Thermal Properties

Satoshi Watanabe1, Koji Shimizu1, Emi Minamitani2 (1.UTokyo, 2.IMS)

Keywords:nitride semiconductors, machine-learning potential, thermal conductivity

We describe the status of our studies on the effecs of singularity structures on various properties of nitride semiconductors, especially the effects of vacancies on the thermal conductivity of GaN crystal, using the machine-learning potentials that are expected to achieve low computational cost and high reliability simultaneously. We also discuss the future prospects of studies of singularity structures in nitride semiconductors using this method.