Symposium (Oral)

[8p-Z02-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Concerted approach of characterization and theory-

Tue. Sep 8, 2020 1:30 PM - 5:30 PM Z02

Yoshihiro Ishitani(Chiba Univ.), Akira Sakai(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[8p-Z02-1] Nanostructural characterization of Mg implanted GaN by STEM/3DAP/CL

〇Tadakatsu Ohkubo¹, Ashutosh Kumar¹, Jun Uzuhashi¹, Wei Yi¹, Jun Chen¹, Takashi Sekiguchi¹, Ryo Tanaka², Shinya Takashima², Masaharu Edo², Kazuhiro Hono¹ (1.NIMS, 2.Fuji Electric Co.)

2:00 PM - 2:30 PM

[8p-Z02-2] Conversion from p-type GaN to n-type by Complexes of Screw Dislocations and Mg: First-principles Calculation and Atom Probe Tomography Analysis

〇Yosuke Harashima¹, Takashi Nakano², Kenta Chokawa¹, Kenji Shiraishi^1,2, Atsushi Oshiyama¹, Yoshihiro Kangawa^3,1, Shigeyoshi Usami², Norihito Mayama⁴, Kazuya Toda⁴, Atsushi Tanaka¹, Yoshio Honda^1,2, Hiroshi Amano^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. Engineering, Nagoya Univ., 3.RIAM, Kyushu Univ., 4.Toshiba Nanoanalysis Corp.)

2:30 PM - 3:00 PM

[8p-Z02-3] Electromagnetic field imaging at local structures by DPC STEM

〇Naoya Shibata^1,2 (1.Univ. Tokyo, 2.JFCC)

3:00 PM - 3:15 PM

[8p-Z02-4] First-principles Estimation of Breakdown Electric Field of defected GaN

〇Hui Zhang^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

3:15 PM - 3:30 PM

△ [8p-Z02-5] Observation and Classification of Threading Dislocations in HVPE-grown GaN Crystal Using Multiphoton-Excitation Photoluminescence (2)

〇Mayuko Tsukakoshi¹, Tomoyuki Tanikawa¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Graduate School of Engineering, Osaka Univ.)

4:00 PM - 4:30 PM

[8p-Z02-6] Microscopic analysis of phonon transport and its effect on the photo emission efficiency

〇Yoshihiro Ishitani¹ (1.Chiba Univ.)

4:30 PM - 5:00 PM

[8p-Z02-7] Phonon transport control by using peculiar structures for thermoelectric performance enhancement

〇Yoshiaki Nakamura¹, Fujita Takeshi² (1.Osaka Univ., 2.Kochi Univ. Technol.)

5:00 PM - 5:30 PM

[8p-Z02-8] Study on Nitride Semiconductor Singularity Structures Using Machine-Learning Potentials: Structures, Phonon and Thermal Properties

〇Satoshi Watanabe¹, Koji Shimizu¹, Emi Minamitani² (1.UTokyo, 2.IMS)

Sessions

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Concerted approach of characterization and theory-