RT-atomic layer deposition of aluminum silicate and its application to ion sorption

Yoshiharu Mori; Kentaro Saito; Kazuki Yoshida; Masanori Miura; Kesanku Kanomata; Bashir Ahmmad; Shigeru Kubota; Fumihiko Hirose

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[8p-Z26-1~23] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Sep 8, 2020 1:00 PM - 7:30 PM Z26

Tsuyoshi Honma(Nagaoka Univ. of Tech.), Akira Saitoh(Ehime Univ.), Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)

4:15 PM - 4:30 PM

[8p-Z26-12] RT-atomic layer deposition of aluminum silicate and its application to ion sorption

Yoshiharu Mori¹, Kentaro Saito¹, Kazuki Yoshida¹, Masanori Miura², Kesanku Kanomata², Bashir Ahmmad¹, Shigeru Kubota¹, 〇Fumihiko Hirose¹ (1.Yamagata Univ., 2.Yamagata Univ. ROEL)

Keywords:Aluminum silicate, Atomic Layer Deposition, ion sorption

The room temeperature atomic layer deposition of aluminum silicate is developed by using a succesive adsorption process. The growth per cycle is demonstrated at 0.155 nm/cycle. The RT deposited aluminum silicate exhibits ions sorption and its exchange. The applicability of present tehnique is discussed in the meeting.