[9a-Z02-1~8] 15.4 III-V-group nitride crystals

[9a-Z02-5] [Highlight]Structural study of AlGaN based ultraviolet-B laser diode on sapphire substrate

〇Kosuke Sato^1,2, Kazuki Yamada², Sayaka Ishizuka², Shunya Tanaka², Tomoya Omori², Shohei Teramura², Sho Iwayama^2,3, Hideto Miyake³, Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki² (1.Asahi-Kasei, 2.Meijo Univ., 3.Mie Univ.)

Keywords:laser, AlGaN, ultraviolet

At last conference, our group have reported current-injected UVB-LD at 298 nm with threshold current density of 41 kA/cm² under pulse operation (pulse width of 50 nano sec and duty ratio of 0.0001) using lattice-relaxed n-AlGaN underlying layer and III-composition-graded p-AlGaN cladding layer. At this presentation, threshold current density was reduced to 25 kA/cm² by developing AlGaN film and device structure.