[9a-Z02-1~8] 15.4 III-V-group nitride crystals

△ [9a-Z02-6] Al content and Mg concentration dependence of polarized doped p-type AlGaN cladding layers on UV-B LD

〇Kazuki Yamada¹, Sato Kosuke^1,2, Yasue Shinji¹, Tanaka Shunya¹, Teramura Shohei¹, Ogino Yuya¹, Omori Tomoya¹, Ishizuka Sayaka¹, Iwayama Sho^1,4, Iwaya Motoaki¹, Takeuchi Tetsuya¹, Kamiyama Satoshi¹, Akasaki Isamu^1,3, Miyake Hideto⁴, Kangawa Yoshihiro⁵, Sakowski Konrad⁶ (1.Fac. Sch. &Tech., Meijo Univ., 2.Asahi-Kasei Co., 3.Akasaki Res. Cen., Nagoya Univ., 4.Grad. Sch. of Reg. Innov. Stu., Mie Univ., 5.RIAM, Kyushu Univ., 6.Institute of High Pressure Physics.)

Keywords:semiconductor, UV-B, AlGaN