The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[9a-Z05-1~8] 6.4 Thin films and New materials

Wed. Sep 9, 2020 9:15 AM - 11:15 AM Z05

Kohei Fujiwara(Tohoku Univ.), Motofumi Suzuki(Kyoto Univ)

10:00 AM - 10:15 AM

[9a-Z05-4] Highly luminescent ZnO Thin Films Obtained by VUV-assisted Sol-Gel Processing

Lina Sun1, Uda Kyota2, Tsukasa Yoshida2, Yoshiyuki Suzuri1 (1.Yamagata Univ. INOEL, 2.Yamagata Univ.)

Keywords:ZnO thin films, photoluminescence, VUV assisted sol-gel processing

In this work, we report a simple novel photochemical sol-gel conversion approach for one-step preparation of ZnO thin films with an average nanocrystals in about 2-3 nm size, by employing vacuum ultraviolet (VUV) light irradiation in dry N2. Systematic characterization is performed to understand the surface chemistry and the optical properties of ZnO nanocrystals. Thus obtained ZnO films show unique absorption peak at 292 nm (4.25 eV) and strong tunable photoluminescence in the range of 386-496 nm when expose to UV light, from violet, blue to bluish-green upon increasing time of VUV irradiation. Clearly blue-shifted absorption peaks of the VUV treated samples are indicative of quantum-confinement effect, as contrasted to the broad character of the annealed film, which originates from band structure of bulky ZnO. The extension of VUV time only results in increase of absorbance, with no change of the peak wavelength, indicating population increase but no crystal growth by Ostwald ripening during the VUV irradiation. Therefore, the color change of the emitted light should be associated with the change of defect state distribution, rather than the size effect. However, such photoluminescence from defects was fairly strong to be clearly recognized by naked eyes, so that the university logo could be patterned by photomasking VUV to be seen under black light was demonstrated.