Chiahung Lin

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM

[13p-D419-11] Fabrication of Vertical Schottky Barrier Diodes on β-Ga₂O₃ Substrates Prepared by Vertical Bridgman Method

〇Chiahung Lin¹, Keigo Hoshikawa^2,3, Atsushi Kajikura³, Quang Tu Thieu¹, Amutha Thangaraja¹, Yuki Uchida¹, Yuki Koishikawa¹, Fumio Otsuka¹, Shinya Watanabe¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, 2.Shinshu Univ., 3.Fujikoshi Machinery Corp.)

Sun. Mar 15, 2020 9:30 AM - 11:30 AM PA5 (PA)

Poster presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 11:30 AM

[15a-PA5-20] Fabrication of 4-inch β-Ga₂O₃ Bulk Substrates and Homoepitaxial Films by EFG and HVPE Methods

〇Chiahung Lin¹, Quang Tu Thieu¹, Ravikiran Lingaparthi¹, Thangaraja Amutha¹, Yuki Uchida¹, Fumio Otsuka¹, Kimiyoshi Koshi¹, Shinya Watanabe¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

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