Masato Higashi

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[13p-PA9-5] Influence of Al₂O₃ Deposition Process on Electrical Properties of Al₂O₃/AlGaN/GaN MIS Structure

〇(M2)Masato Higashi¹, Mutsunori Uenuma¹, Koji Yoshitsugu², Eiji Yagyu², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Mitsubishi Electric Corp.)