Yasuharu Kiyotou

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

6:15 PM - 6:30 PM

[14p-A302-17] Etching depth control by selective anodic oxidation in GaN oxide-formed two-step wet-etching method

〇(M2)Yasuharu Kiyotou¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Tech., 2.IIS, The Univ. of Tokyo)