Ryota Ochi

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

2:15 PM - 2:30 PM

△ [14p-B401-4] Electrical characteristics of HfSiO_x-gate AlGaN/GaN MOS-HEMT

〇Ryota Ochi¹, Erika Maeda^2,3, Toshihide Nabatame², Koji Shiozaki⁴, Tamotsu Hashizume^1,4 (1.Hokkaido Univ., 2.NIMS, 3.SIT, 4.Nagoya Univ.)