Ali Baratov

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

2:30 PM - 2:45 PM

△ [14p-B401-5] Study on gain improvement in AlGaN/GaN MOS HEMTs

〇(M1)Ali Baratov¹, Takashi Ozawa¹, Mohammad Nazrin¹, Shunpei Yamashita¹, Joel T. Asubar¹, Hirokuni Tokuda¹, Masato Nishimori², Yoichi Kawano², Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.Fujitsu Laboratories Ltd.)

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