Shunichi Yokoi

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

3:15 PM - 3:30 PM

[14p-B401-7] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD

〇Shunichi Yokoi¹, Keita Furuoka¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst.)