Mengnan Ke

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 12:30 PM A305 (6-305)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[15a-A305-1~13] 13.3 Insulator technology

11:30 AM - 11:45 AM

▲ [15a-A305-10] Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

11:45 AM - 12:00 PM

▲ [15a-A305-11] Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

12:00 PM - 12:15 PM

▲ [15a-A305-12] Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)