Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15a-A305-1~13] 13.3 Insulator technology

Sun. Mar 15, 2020 9:00 AM - 12:30 PM A305 (6-305)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-A305-1] Theoretical study on emitted Si in Si oxide films

〇Hiroyuki Kageshima¹, Yuji Yajima¹, Kenji Shiraishi², Tetsuo Endoh³ (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ.)

9:15 AM - 9:30 AM

[15a-A305-2] Electric propertes of anodic SiO2 film oxidized in high-pressure steam

〇Takumi Katata¹, Masaki Tsunoda¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

9:30 AM - 9:45 AM

[15a-A305-3] The influence of low temperature oxidation process on electrical stress tolerance of SiO₂

〇Kosuke Yasuda¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

9:45 AM - 10:00 AM

[15a-A305-4] XPS analysis of a low-temperature ALD film by high purity ozone and ethylene with TMA

〇Takayuki Hagiwara¹, Ayaka Abe¹, Naoto Kameda¹, Toshinori Miura¹, Yoshiki Morikawa¹, Mitsuru Kekura¹, Ken Nakamura², Hidehiko Nonaka² (1.Meidensha Corp., 2.AIST)

10:00 AM - 10:15 AM

▼ [15a-A305-5] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition
of Silicon Nitride

〇HuaHsuan Chen¹, Beibei Ge¹, Daisuke Ohori¹, Tomohiro Kubota², Dai Ishikawa², Seiji Samukawa³ (1.IFS, Tohoku Univ., 2.ASM Japan K.K., 3.AIMR, Tohoku Univ.)

10:15 AM - 10:30 AM

▲ [15a-A305-6] Evaluation of doping concentration of MoS₂ via Schottky diode for the Terman method

〇Xiaoxuan Zhang¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

10:45 AM - 11:00 AM

△ [15a-A305-7] Investigation on band alignment modulation by interface dipole layer formation at perovskite oxide interface

〇Atsushi Tamura¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:00 AM - 11:15 AM

△ [15a-A305-8] Correlation between the temperature dependence of Al₂O₃/SiO₂ interface dipole layer strength with the density of oxides

〇Takashi Hamaguchi¹, Koji Kita¹ (1.Tokyo Univ.)

11:15 AM - 11:30 AM

[15a-A305-9] Potential modulation observed from ALD-ZrO₂/TiO₂/SiO₂ MOS structures

〇Shutaro Asanuma¹, Kyoko Sumita¹, Yusuke Miyaguchi², Kazumasa Horita², Takehito Jimbo², Kazuya Saito², Noriyuki Miyata¹ (1.AIST, 2.ULVAC)

11:30 AM - 11:45 AM

▲ [15a-A305-10] Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

11:45 AM - 12:00 PM

▲ [15a-A305-11] Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

12:00 PM - 12:15 PM

▲ [15a-A305-12] Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

〇Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

12:15 PM - 12:30 PM

[15a-A305-13] Study of GeO₂/Ge structure formed after Hf deposition

〇Haruka Horiguchi¹, Tomo Ueno¹, Yoshitaka Iwazaki¹, Hirotaka Ino¹ (1.Noukou Univ.)

Session information

[15a-A305-1~13] 13.3 Insulator technology

[15a-A305-1] Theoretical study on emitted Si in Si oxide films

[15a-A305-2] Electric propertes of anodic SiO2 film oxidized in high-pressure steam

[15a-A305-3] The influence of low temperature oxidation process on electrical stress tolerance of SiO₂

[15a-A305-4] XPS analysis of a low-temperature ALD film by high purity ozone and ethylene with TMA

▼ [15a-A305-5] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition
of Silicon Nitride

▲ [15a-A305-6] Evaluation of doping concentration of MoS₂ via Schottky diode for the Terman method

△ [15a-A305-7] Investigation on band alignment modulation by interface dipole layer formation at perovskite oxide interface

△ [15a-A305-8] Correlation between the temperature dependence of Al₂O₃/SiO₂ interface dipole layer strength with the density of oxides

[15a-A305-9] Potential modulation observed from ALD-ZrO₂/TiO₂/SiO₂ MOS structures

▲ [15a-A305-10] Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

▲ [15a-A305-11] Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

▲ [15a-A305-12] Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

[15a-A305-13] Study of GeO₂/Ge structure formed after Hf deposition

Authentication

Session information

[15a-A305-1~13] 13.3 Insulator technology

[15a-A305-1] Theoretical study on emitted Si in Si oxide films

[15a-A305-2] Electric propertes of anodic SiO2 film oxidized in high-pressure steam

[15a-A305-3] The influence of low temperature oxidation process on electrical stress tolerance of SiO2

[15a-A305-4] XPS analysis of a low-temperature ALD film by high purity ozone and ethylene with TMA

▼ [15a-A305-5] Low Temperature Neutral Beam Enhanced Atomic Layer Depositionof Silicon Nitride

▲ [15a-A305-6] Evaluation of doping concentration of MoS2 via Schottky diode for the Terman method

△ [15a-A305-7] Investigation on band alignment modulation by interface dipole layer formation at perovskite oxide interface

△ [15a-A305-8] Correlation between the temperature dependence of Al2O3/SiO2 interface dipole layer strength with the density of oxides

[15a-A305-9] Potential modulation observed from ALD-ZrO2/TiO2/SiO2 MOS structures

▲ [15a-A305-10] Characteristics of slow traps in Al2O3/GeOx/n-Ge MOS interfaces by plasma oxidation

▲ [15a-A305-11] Proposal of a measurement method to discriminate different types of traps in n-Ge MOS gate nsulators

▲ [15a-A305-12] Comparison of carrier trap characteristics in different interfacial layers of n-Ge MOS structures

[15a-A305-13] Study of GeO2/Ge structure formed after Hf deposition

Authentication

[15a-A305-3] The influence of low temperature oxidation process on electrical stress tolerance of SiO₂

▼ [15a-A305-5] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition
of Silicon Nitride

▲ [15a-A305-6] Evaluation of doping concentration of MoS₂ via Schottky diode for the Terman method

△ [15a-A305-8] Correlation between the temperature dependence of Al₂O₃/SiO₂ interface dipole layer strength with the density of oxides

[15a-A305-9] Potential modulation observed from ALD-ZrO₂/TiO₂/SiO₂ MOS structures

▲ [15a-A305-10] Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

[15a-A305-13] Study of GeO₂/Ge structure formed after Hf deposition