Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 12, 2020 10:00 AM - 11:45 AM A202 (6-202)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[12a-A202-1] Deformation of PVA roller brushes on a rotating wafer

〇Tsubasa Miyaki¹, Yuki Mizushima¹, Toshiyuki Sanada¹, Satomi Hamada², Akira Fukunaga², Hirokuni Hiyama² (1.Shizuoka Univ., 2.Ebara Corp.)

10:15 AM - 10:30 AM

[12a-A202-2] Mechanism of WET chemical atomic layer etching on Ⅲ-Ⅴ compound semiconductor

〇Tomoki Hirano¹, Kenya Nishio¹, Takashi Fukatani¹, Suguru Saito¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions)

10:30 AM - 10:45 AM

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

〇Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida³, Masahiro Sota³, Kazuhiko Endo⁴, Seiji Samukawa^1,2,4 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NAGASE & CO., LTD., 4.AIST)

10:45 AM - 11:00 AM

[12a-A202-4] Dependence of Underlayer Surface Condition on Incubation Cycles in Si Nitride Film Growth using Atomic Layer Deposition Method

〇Shinji Kimura¹, Tadashi Yamaguchi¹, Masao Inoue¹ (1.Renesas)

11:00 AM - 11:15 AM

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

〇Hidetoshi Nakanishi¹, Tatsuhiko Nishimura¹, Akira Ito¹, Katsuya Fujita¹ (1.SCREEN)

11:15 AM - 11:30 AM

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO₂/Si interface states by hydrocarbon molecular ion implantation-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

11:30 AM - 11:45 AM

[12a-A202-7] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

〇Hiroki Obana¹, Narumi Abe¹, Yuki Kumagae¹, Takuma Yamashita¹, Ryo Ogasawara², Tatsuki Hamada², Masanari Miyauchi², Ryo Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

Session information

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1] Deformation of PVA roller brushes on a rotating wafer

[12a-A202-2] Mechanism of WET chemical atomic layer etching on Ⅲ-Ⅴ compound semiconductor

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[12a-A202-4] Dependence of Underlayer Surface Condition on Incubation Cycles in Si Nitride Film Growth using Atomic Layer Deposition Method

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO₂/Si interface states by hydrocarbon molecular ion implantation-

[12a-A202-7] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

Authentication

Session information

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1] Deformation of PVA roller brushes on a rotating wafer

[12a-A202-2] Mechanism of WET chemical atomic layer etching on Ⅲ-Ⅴ compound semiconductor

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[12a-A202-4] Dependence of Underlayer Surface Condition on Incubation Cycles in Si Nitride Film Growth using Atomic Layer Deposition Method

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO2/Si interface states by hydrocarbon molecular ion implantation-

[12a-A202-7] Evaluation of metal contamination in SiO2 by Pulse Photoconductivity Method

Authentication

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO₂/Si interface states by hydrocarbon molecular ion implantation-

[12a-A202-7] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method