Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Thu. Mar 12, 2020 1:45 PM - 5:15 PM A305 (6-305)

Munehiro Tada(NEC), Marina Yamaguchi(Kioxia)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [12p-A305-1] Analysis of Extremely Large Random Telegraph Noise (RTN) in Ultra-Narrow Gate-All-Around (GAA) Silicon Nanowire Transistors

〇(M2)Hayato Kimura¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^2,1, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

2:00 PM - 2:15 PM

▼ [12p-A305-2] Detection of Charge Traps in Silicon Nanowire MOSFETs Using Transient Current Measurements

〇(M2)Boyang Cui¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab,Univ of Tokyo)

2:15 PM - 2:30 PM

[12p-A305-3] Detection of a P_b1 center by the charge pumping method

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

2:30 PM - 2:45 PM

[12p-A305-4] Analysis of Drain Current Enhancement Effect on PN-Body Tied SOI-FET
-Comparison of Bulk vs Surface Conduction-

〇Hiroki Ito¹, Jiro Ida¹, Takayuki Mori¹ (1.Kanazawa Inst. of Tech)

2:45 PM - 3:00 PM

[12p-A305-5] Electrical Characteristics of Mg₂Si/Si Hetero-junction Zener Diode

〇Naoya Yamaguchi¹, Eito Kan¹, Yusuke Nakano¹, Keisuke Kishi¹, Ryota Karakama¹, Shiro Mita¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

3:00 PM - 3:15 PM

[12p-A305-6] Measurement of Temperature Distribution inside Silicon Wafer in Millisecond by Optical Interference Contactless Thermometer

〇Tatsuki Koyanagi¹, Asaki Kameda¹, Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

3:30 PM - 3:45 PM

[12p-A305-7] Large-Scale Evaluation of MIM Devices Using High-Precision Current Measurement Array Test Circuit

〇Hayato Suzuki¹, Hyeonwoo Park¹, Akinobu Teramoto^2,3, Rihito Kuroda^1,3, Tomoyuki Suwa³, Shigetoshi Sugawa^1,3 (1.Grad. Sch. Eng., Tohoku Univ., 2.Res. Inst. for Nanodevice and Bio Systems, Hiroshima Univ., 3.NICHe, Tohoku Univ.)

3:45 PM - 4:00 PM

[12p-A305-8] Statistical Analysis of Temperature Dependence of Worst Case Data Retention Voltage in SRAM Using Extreme Value Theory

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS,Univ. of Tokyo, 2.d.lab,Univ. of Tokyo)

4:00 PM - 4:15 PM

[12p-A305-9] Proposal of a new virtually nonvolatile SRAM cell

〇Hayato Yoshida¹, Daiki Kitagata¹, Shuu'ichiro Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech)

4:15 PM - 4:30 PM

[12p-A305-10] Design and analysis of virtually nonvolatile SRAM cell for near-threshold voltage operation.

〇Takumi Hara¹, Hayato Yoshida¹, Daiki Kitagata¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo inst. of Tech.)

4:30 PM - 4:45 PM

[12p-A305-11] Improvement of Set-voltage Variability of Cu Atom Switch with Split-electrode

〇Naoki Banno¹, Koichiro Okamoto¹, Hideaki Numata¹, Noriyuki Iguchi¹, Toshitsugu Sakamoto¹, Munehiro Tada¹ (1.NEC Corp.)

4:45 PM - 5:00 PM

[12p-A305-12] Development of Via-Switch with Multi-Layered a-Si/SiN/a-Si Varistor

〇Noriyuki Iguchi¹, Naoki Banno¹, Koichiro Okamoto¹, Hideaki Numata¹, Masanori Hashimoto², Tadahiko Sugibayashi¹, Toshitsugu Sakamoto¹, Munehiro Tada¹ (1.NEC Corp., 2.Oosaka Univ.)

5:00 PM - 5:15 PM

[12p-A305-13] Temperature dependence of electrical conduction for O₂-annealed TaO_xReRAM

〇(M1C)Soshun Doko¹, Masahiro Suzuki¹, Yoshiaki Ishii¹, Masahiro Moniwa¹ (1.Tokyo Univ. of Technology)

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