The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 12, 2020 10:00 AM - 11:45 AM A202 (6-202)

Koichiro Saga(Sony)

11:00 AM - 11:15 AM

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

Hidetoshi Nakanishi1, Tatsuhiko Nishimura1, Akira Ito1, Katsuya Fujita1 (1.SCREEN)

Keywords:Grinding surface, Terahertz wave, Femtosecond laser

A Laser Terahertz Emission Microscope (LTEM) is a technique for visualizing THz waves emitted by irradiating a sample such as a semiconductor with femtosecond laser pulses. Since THz waves are emitted from the semiconductor interface region (including the surface), the characteristics of the region can be selectively analyzed by a non-contact method. In recent years, the importance of a wafer surface grinding technique and its evaluation technique has been increasing. We report the non-destructive and non-contact measurement of the surface potential of the grinding Si wafer surface using LTEM.