Oral presentation

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 12, 2020 10:00 AM - 11:45 AM A202 (6-202)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[12a-A202-1] Deformation of PVA roller brushes on a rotating wafer

〇Tsubasa Miyaki¹, Yuki Mizushima¹, Toshiyuki Sanada¹, Satomi Hamada², Akira Fukunaga², Hirokuni Hiyama² (1.Shizuoka Univ., 2.Ebara Corp.)

10:15 AM - 10:30 AM

[12a-A202-2] Mechanism of WET chemical atomic layer etching on Ⅲ-Ⅴ compound semiconductor

〇Tomoki Hirano¹, Kenya Nishio¹, Takashi Fukatani¹, Suguru Saito¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions)

10:30 AM - 10:45 AM

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

〇Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida³, Masahiro Sota³, Kazuhiko Endo⁴, Seiji Samukawa^1,2,4 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NAGASE & CO., LTD., 4.AIST)

10:45 AM - 11:00 AM

[12a-A202-4] Dependence of Underlayer Surface Condition on Incubation Cycles in Si Nitride Film Growth using Atomic Layer Deposition Method

〇Shinji Kimura¹, Tadashi Yamaguchi¹, Masao Inoue¹ (1.Renesas)

11:00 AM - 11:15 AM

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

〇Hidetoshi Nakanishi¹, Tatsuhiko Nishimura¹, Akira Ito¹, Katsuya Fujita¹ (1.SCREEN)

11:15 AM - 11:30 AM

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO₂/Si interface states by hydrocarbon molecular ion implantation-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

11:30 AM - 11:45 AM

[12a-A202-7] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

〇Hiroki Obana¹, Narumi Abe¹, Yuki Kumagae¹, Takuma Yamashita¹, Ryo Ogasawara², Tatsuki Hamada², Masanari Miyauchi², Ryo Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

Oral presentation

[12p-A202-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 12, 2020 1:15 PM - 4:45 PM A202 (6-202)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[12p-A202-1] Oxidation mechanism of Si nanopillar/nanowire

〇ShuJun YE¹, Kikuo YAMABE¹, Tetsuo ENDOH¹ (1.Tohoku Univ.)

1:30 PM - 1:45 PM

△ [12p-A202-2] A study on the evaluation of bias stress effects on a SiO₂/Si interface using local deep level transient spectroscopy

〇(B)Koharu Suzuki¹, Kohei Yamasue¹, Yasuo Cho¹ (1.Tohoku Univ.)

1:45 PM - 2:00 PM

[12p-A202-3] Novel method to estimate density of SiO₂/Si interface by using Hakoniwa method

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

2:00 PM - 2:15 PM

[12p-A202-4] Possibilities of Growth of Si polytypes by Homoepitaxial Growth: Evaluation by the Free Energy

〇Reo Kita¹, Masayuki Toyoda¹, Susumu Saito¹ (1.Tokyo Inst. of tech.)

2:15 PM - 2:30 PM

▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO₂ and HfON tunneling layer

〇(D)Jooyoung Pyo¹, Yusuke Horiuchi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

2:30 PM - 2:45 PM

△ [12p-A202-6] Investigation of Hf-based MONOS nonvolatile memory with multi charge trapping layers

〇(M2)Yusuke Horiuchi¹, Hiroki Morita¹, Jooyoung Pyo¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

2:45 PM - 3:00 PM

▼ [12p-A202-7] Atomic structures and electrical properties of SiO₂/4H-SiC interfaces

〇(DC)Efi Dwi Indari^1,2, Yoshiyuki Yamashita^1,2, Ryu Hasunuma³, Kikuo Yamabe³ (1.Kyushu University, 2.NIMS, 3.University of Tsukuba)

3:15 PM - 3:30 PM

△ [12p-A202-8] Reduction of Order of Tight-binding Hamiltonian by Artificial Neural Network

〇(B)Jo Okada¹, Nobuya Mori¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

[12p-A202-9] A study on the application of convolutional neural network for the acceleration of nanoscale device simulation

〇SATOFUMI SOUMA¹, MATSUTO OGAWA¹ (1.Kobe Univ.)

3:45 PM - 4:00 PM

[12p-A202-10] Interaction between target gas and functionalized molecules on molecular functionalized transistor gas sensors

〇Takahisa Tanaka¹, Takeaki Yajima¹, Ken Uchida¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

[12p-A202-11] Monte Carlo Simulations of Single-Layer MoS₂ under 3D Device Structures Ⅱ

〇Shuta Okada¹, Katsuhisa Yoshida¹, Nobuyuki Sano¹ (1.Univ. of Tsukuba)

4:15 PM - 4:30 PM

▼ [12p-A202-12] A New Unidentified Phonon State in SiGe Alloys Reproduced by Molecular Dynamics Simulation

〇(D)Sylvia YukYee Chung¹, Motohiro Tomita^1,2, Ryo Yokogawa^3,4, Atsushi Ogura³, Takanobu Watanabe^1,2 (1.Waseda University, 2.Org. Univ. Res. Init, 3.Meiji University, 4.JSPS Res. Fellow DC)

4:30 PM - 4:45 PM

[12p-A202-13] Study on Interface Conditions between Phonon Boltzmann and Heat Equations in TCAD Simulation

〇Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹ (1.AIST)

Poster presentation

[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[13p-PA4-1] Trench Patterning of Ge surface by Graphene-Assisted Chemical Etching

〇(M1)Ryo Mikurino¹, Ayumi Ogasawara¹, Tomoki Hirano¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[13p-PA4-2] Modeling of electron transmission and time-development of electron density distribution
in the nanoscale device under random impurity fluctuation with machine learning

Ryuho Nakaya¹, Souma Kawahara¹, Yoshitaka Itoh¹, Tota Suko², 〇Masakazu Muraguchi¹ (1.Hokkaido Univ. of Science, 2.Waseda Univ.)

1:30 PM - 3:30 PM

[13p-PA4-3] Effects of Interface Charge on Cellular Automaton Device Simulation of HEMT

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kozo Makiyama², Junji Kotani² (1.AIST, 2.Fujitsu)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1] Deformation of PVA roller brushes on a rotating wafer

[12a-A202-2] Mechanism of WET chemical atomic layer etching on Ⅲ-Ⅴ compound semiconductor

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[12a-A202-4] Dependence of Underlayer Surface Condition on Incubation Cycles in Si Nitride Film Growth using Atomic Layer Deposition Method

[12a-A202-5] Potential evaluation of grinding surface of Si wafers using a Laser Terahertz Emission Microscope

[12a-A202-6] Product design of silicon wafer for advanced CMOS image sensors-Control of SiO₂/Si interface states by hydrocarbon molecular ion implantation-

[12a-A202-7] Evaluation of metal contamination in SiO₂ by Pulse Photoconductivity Method

[12p-A202-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12p-A202-1] Oxidation mechanism of Si nanopillar/nanowire

△ [12p-A202-2] A study on the evaluation of bias stress effects on a SiO₂/Si interface using local deep level transient spectroscopy

[12p-A202-3] Novel method to estimate density of SiO₂/Si interface by using Hakoniwa method

[12p-A202-4] Possibilities of Growth of Si polytypes by Homoepitaxial Growth: Evaluation by the Free Energy

▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO₂ and HfON tunneling layer

△ [12p-A202-6] Investigation of Hf-based MONOS nonvolatile memory with multi charge trapping layers

▼ [12p-A202-7] Atomic structures and electrical properties of SiO₂/4H-SiC interfaces

△ [12p-A202-8] Reduction of Order of Tight-binding Hamiltonian by Artificial Neural Network

[12p-A202-9] A study on the application of convolutional neural network for the acceleration of nanoscale device simulation

[12p-A202-10] Interaction between target gas and functionalized molecules on molecular functionalized transistor gas sensors

[12p-A202-11] Monte Carlo Simulations of Single-Layer MoS₂ under 3D Device Structures Ⅱ

▼ [12p-A202-12] A New Unidentified Phonon State in SiGe Alloys Reproduced by Molecular Dynamics Simulation

[12p-A202-13] Study on Interface Conditions between Phonon Boltzmann and Heat Equations in TCAD Simulation

[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[13p-PA4-1] Trench Patterning of Ge surface by Graphene-Assisted Chemical Etching

[13p-PA4-2] Modeling of electron transmission and time-development of electron density distribution
in the nanoscale device under random impurity fluctuation with machine learning

[13p-PA4-3] Effects of Interface Charge on Cellular Automaton Device Simulation of HEMT

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12a-A202-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [12a-A202-3] Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[12p-A202-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [12p-A202-2] A study on the evaluation of bias stress effects on a SiO2/Si interface using local deep level transient spectroscopy

▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO2 and HfON tunneling layer

△ [12p-A202-6] Investigation of Hf-based MONOS nonvolatile memory with multi charge trapping layers

▼ [12p-A202-7] Atomic structures and electrical properties of SiO2/4H-SiC interfaces

△ [12p-A202-8] Reduction of Order of Tight-binding Hamiltonian by Artificial Neural Network

▼ [12p-A202-12] A New Unidentified Phonon State in SiGe Alloys Reproduced by Molecular Dynamics Simulation

[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Authentication

△ [12p-A202-2] A study on the evaluation of bias stress effects on a SiO₂/Si interface using local deep level transient spectroscopy

▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO₂ and HfON tunneling layer

▼ [12p-A202-7] Atomic structures and electrical properties of SiO₂/4H-SiC interfaces