Investigation of Hf-based MONOS nonvolatile memory with multi charge trapping layers

Yusuke Horiuchi; Hiroki Morita; Jooyoung Pyo; Shun-ichiro Ohmi

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[12p-A202-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 12, 2020 1:15 PM - 4:45 PM A202 (6-202)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

2:30 PM - 2:45 PM

△ [12p-A202-6] Investigation of Hf-based MONOS nonvolatile memory with multi charge trapping layers

〇(M2)Yusuke Horiuchi¹, Hiroki Morita¹, Jooyoung Pyo¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:Hf-based MONOS nonvolatile memory, multi charge trapping layers, ECR plasma sputter

Last time, we reported the device characteristics of Hf-based MONOS nonvolatile memory. This time, we investigated the improvement of memory characteristics by increasing the number of charge trapping layers (CTL).