The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[12p-A201-1~8] 15.1 Bulk crystal growth

Thu. Mar 12, 2020 1:45 PM - 5:00 PM A201 (6-201)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

4:30 PM - 4:45 PM

[12p-A201-7] Thermal field control by using multi-insulators with different thermal conductivities during RF-TSSG SiC crystal growth

Yasunori Okano1, Yuto TAkehara1, Lei Wang1, Atsushi Sekimoto1, Toru Ujihara2 (1.Osaka Univ, 2.Nagoya Univ)

Keywords:Numerical simulation, SiC, TSSG method

Top-Seeded Solution Growth (TSSG) method is a promising technique for the production of high-quality SiC crystals. The authors previously found that Marangoni convection developing in the growth melt of the TSSG process is responsible for the non-uniform crystal growth rates even under normal gravity field. In order to obtain uniform growth rates, the authors applied an adjoint optimization technique to determine an optimal temperature distribution along the inner crucible wall. In this direction, the required thermal conductivity distribution of the insulation material used in the furnace was determined through numerical simulations. However, the simulation results showed that an optimal temperature distribution requires an impractical insulation distribution. To address this issue properly, in the present numerical study, the method of stacking ring-shaped insulator materials with different thermal conductivities was studied.