2020年第67回応用物理学会春季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.1 Si系基礎物性・表面界面・シミュレーション

[12p-A202-1~13] 13.1 Si系基礎物性・表面界面・シミュレーション

2020年3月12日(木) 13:15 〜 16:45 A202 (6-202)

森 伸也(阪大)、蓮沼 隆(筑波大)

14:15 〜 14:30

[12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO2 and HfON tunneling layer

〇(D)Jooyoung Pyo1、Yusuke Horiuchi1、Shun-ichiro Ohmi1 (1.Tokyo Tech.)

キーワード:Non-volatile memory, MONOS diode, HfON

We have investigated Hf-based MONOS non-volatile memories (NVM) to improve the memory characteristics. The 6 V/2 ms operation was confirmed for the Hf-based MONOS NVM with HfO2 tunneling layer (TL). However, SiO2 interfacial layer (IL) between the TL and Si substrate would be formed which increases the equivalent oxide thickness (EOT) and degrades memory characteristics. In this experiment, we utilized HfON as the TL of MONOS diodes to decrease the EOT and improve the memory characteristics.