[12p-A202-1~13] 13.1 Si系基礎物性・表面界面・シミュレーション

▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO₂ and HfON tunneling layer

〇(D)Jooyoung Pyo¹、Yusuke Horiuchi¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：Non-volatile memory, MONOS diode, HfON

We have investigated Hf-based MONOS non-volatile memories (NVM) to improve the memory characteristics. The 6 V/2 ms operation was confirmed for the Hf-based MONOS NVM with HfO₂ tunneling layer (TL). However, SiO₂ interfacial layer (IL) between the TL and Si substrate would be formed which increases the equivalent oxide thickness (EOT) and degrades memory characteristics. In this experiment, we utilized HfON as the TL of MONOS diodes to decrease the EOT and improve the memory characteristics.