The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[12p-A303-1~15] 13.8 Optical properties and light-emitting devices

Thu. Mar 12, 2020 1:45 PM - 5:45 PM A303 (6-303)

Yasushi Nanai(Aoyama Gakuin Univ.), Kenji Shinozaki(AIST)

3:45 PM - 4:00 PM

[12p-A303-8] UV lamps excited by Xe2* VUV light source

Yuichiro Hatanaka1, Tadashi Ishigaki1, Kotoku Ohmi1, Kaisei Iwata2, Masaru Nakamura2 (1.Tottori Univ., 2.QUARK TECHNOLOGY CO.)

Keywords:Xe2* VUV light, UV lamps, phosphor

Using a 172 nm vacuum ultraviolet (VUV) Xe2* excimer lamp as an excitation light source, we aim to develop an ultraviolet lamp with an emission peak near the mercury resonance line (254 nm). We synthesized YPO4:Bi, YPO4:Pr, and YBO3:Pr phosphors, and evaluated the photoluminescence (PL) intensity during VUV excitation. The PL intensity of YPO4:Bi was extremely high, and the light emission increased with decreasing the filling thickness.