[12p-A305-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [12p-A305-1] Analysis of Extremely Large Random Telegraph Noise (RTN) in Ultra-Narrow Gate-All-Around (GAA) Silicon Nanowire Transistors

〇(M2)Hayato Kimura¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^2,1, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

Keywords:nanowire, gate-all-around, random telegraph noise

Silicon nanowire transistor with gate-all-around (GAA) structures has attracted much attention as next-generation device candidate. On the other hand, random telegraph noise (RTN) due to traps is one of the major issues for scaled transistors. In this paper, we report extremely large random telegraph noise (RTN) in ultra-narrow silicon GAA nanowire transistors which cannot be found in Bulk and SOI transistors.